PART |
Description |
Maker |
2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH SWITCHING P-channel MOS FET (-30V, -2A)
|
NEC[NEC]
|
2SJ325 2SJ325-Z-E2 2SJ325-Z-E2JM 2SJ325-Z-T1 2SJ32 |
P-channel enhancement type SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-252VAR
|
NEC Corp.
|
MSN3402A |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
RJK03M5DPA-00-J5A |
30V, 30A, 6.5mmax.N Channel Power MOS FET
|
Renesas Electronics Corporation
|
RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
RJK0301DPB-02-15 |
30V, 60A, 2.8mΩ max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK03E9DPA RJK03E9DPA-00-J5A |
30V, 35A, 4.3m max N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SJ486 |
RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开 Silicon P Channel MOS FET Low FrequencyPower Switching Silicon P-Channel MOS FET
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
RJK03N6DPA |
30V, 40A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING N-channel enhancement type MOS FET
|
NEC
|